Quantum dot qubit using High NA EUV lithography
Recorded: May 30, 2026, 9 a.m.
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Semiconductor technologyLife sciences and health solutionsData and telecommunicationAutomotive technologiesRobotics technology for Industry 4.0More applications /World first: imec presents quantum dot qubit device using High NA EUV lithography Press releaseWorld first: imec presents quantum dot qubit device using High NA EUV lithography The most advanced lithography system, crucial for future advanced memory and computer chips, will play a key role in scaling up quantum technology LEUVEN (Belgium), MAY 19, 2026— This week, at ITF World, imec, a world-leading research and innovation hub in advanced semiconductor technologies, presents a world first: a quantum dot qubit device fabricated using High NA EUV lithography. This achievement marks a milestone toward the industrial scaling of more reliable qubits, the basic computational units of quantum computers. To the best of our knowledge, this is the first integrated hardware device created using High NA EUV lithography. For specific, complex computational problems, such as developing new drugs or simulating physical processes, a quantum computer could perform exponentially better than classical computers. However, for a useful quantum computer, we need to scale to millions of connected qubits (the computational units of a quantum computer), with high reliability and precise control.Of the various quantum platforms currently under investigation, silicon quantum dot spin qubits are considered a promising candidate for industrial scaling and are often referred to as ‘the industry qubits’. Their production process is largely compatible with the production of standard computer chips on silicon (CMOS), a research domain in which imec has built global authority over the past decades.“We can leverage decades of semiconductor innovation and reuse the entire ecosystem of silicon scaling, moving quantum devices beyond lab experiments to large-scale, manufacturable systems. This is where silicon-based qubits have a clear advantage”, Sofie Beyne, project leader and quantum integration engineer at imec, explains.Silicon quantum dot spin qubits confine an electron within a silicon nanostructure (the gate layer). The ‘spin state’ of the trapped electron is used to store quantum information. Gaps between the various gates must be minimized to limit environmental noise.Imec has succeeded in fabricating a functioning network of qubits with gaps of barely 6 nanometers. Thanks to the nanoscale of this hardware component, millions of quantum bits can theoretically be integrated onto a single chip.“High NA EUV enables the precise patterning of silicon quantum dot qubits. As the coupling strength between neighboring quantum dots increases exponentially with the gap between them, we need to reliably pattern gaps of a few nanometers between the control electrodes of the quantum dots. This is a true engineering feat, thanks to our integration and patterning teams and ASML's outstanding high NA EUV technology”, says Kristiaan De Greve, imec fellow and program director Quantum Computing.This demonstration builds on imec’s previous results with silicon quantum dot spin qubits, which already demonstrated that CMOS-compatible processes can lead to low charge noise and stable qubit operation. By adding High NA EUV lithography to the production process, the focus shifts from individual demonstration devices in the lab to 300mm fab-compatible, reproducible quantum bits.While it’s obvious that High NA EUV lithography will be crucial for sub-2nm logic and high-density memory technologies that fuel the rapid growth of advanced AI and high-performance computing, it is now becoming clear that it will also play a pivotal role in hardware for future quantum computing. Jade LiuInternational press communications (Americas, GCC, Asia-Pacific) Linda WetzelInternational press communications (Europe)More:Physical qubits for quantum computingSi MOS quantum dot spin qubits: roads to upscalingPublished on:19 May 2026 Share this article on Functioning array of qubits with gaps between plunger (P) and barrier (B) gates of barely 6 nanometers, enabled by High NA EUV lithography. The image also shows the About imecImec is a world-leading research and innovation hub in advanced semiconductor technologies. Leveraging its state-of-the-art R&D infrastructure and the expertise of over 6,500 employees, imec drives innovation in semiconductor and system scaling, artificial intelligence, silicon photonics, connectivity, and sensing.Imec’s advanced research powers breakthroughs across a wide range of industries, including computing, health, automotive, industry, consumer electronics, aerospace and security. 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Imec, a leading research and innovation hub in advanced semiconductor technologies, recently presented a world first achievement: a quantum dot qubit device fabricated using High NA EUV lithography. This accomplishment represents a significant step toward the industrial scaling of reliable qubits, which are the fundamental computational units of quantum computers. The text emphasizes that this development signifies the first integrated hardware device successfully created using High NA EUV lithography. The development positions silicon quantum dot spin qubits as a promising candidate for industrial scaling and is often referred to as ‘the industry qubits’ because their production process is compatible with standard silicon chip manufacturing, or CMOS technology, an area where imec has established global authority. Sofie Beyne, project leader and quantum integration engineer at imec, explained that the group can leverage decades of semiconductor innovation and reuse the entire ecosystem of silicon scaling to move quantum devices beyond laboratory experiments into large-scale, manufacturable systems, asserting that silicon-based qubits hold a distinct advantage in this transition. The physical realization of these qubits involves confining an electron within a silicon nanostructure, where the electron's spin state stores the quantum information, and minimizing the gaps between these structures is essential to limit environmental noise. Imec has achieved the fabrication of a functioning network of qubits with gaps as small as 6 nanometers, a feat made possible by the nanoscale precision of the hardware components. The use of High NA EUV lithography is critical for enabling this level of integration. As the coupling strength between neighboring quantum dots increases exponentially with the separation between them, reliably patterning gaps of a few nanometers between the control electrodes of the quantum dots becomes a demanding engineering task. Kristiaan De Greve, imec fellow and program director for Quantum Computing, noted that this precise patterning is an engineering achievement enabled by the integration and patterning teams and ASML's High NA EUV technology. This demonstration builds upon previous results showing that CMOS-compatible processes can yield low charge noise and stable qubit operation in silicon quantum dot spin qubits. By incorporating High NA EUV lithography into the production process, the focus shifts from demonstrating individual devices in a laboratory setting to creating reproducible quantum bits compatible with 300mm fabrication facilities. Consequently, although High NA EUV is widely recognized as crucial for advanced logic and memory technologies fueling artificial intelligence and high-performance computing, it is now clearly recognized as playing a pivotal role in the hardware necessary for future quantum computing systems. Imec’s work further extends this expertise across broader areas such as integrated photonics, sensing and actuation systems, and connectivity technology, positioning the group as a comprehensive leader in advanced semiconductor research. |